smd type ic smd type transistors 1 emitter 2 base 3 collector 2SD1823 features high forward current transfer ratio hfe. low collector-emitter saturation voltage v ce(sat). high emitter-base voltage v ebo. low noise voltage nv. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 15 v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 h fe classification marking rank r s t h fe 400 800 600 1200 1000 2000 1z electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base voltage v cbo i c =10a,i e =0 50 v collector-emitter voltage v ceo i c =1ma,i b =0 40 v emitter-base voltage v ebo i e =10a,i c =0 15 v collector-base cutoff current i cbo v cb =20v,i e =0 0.1 a collector-emitter cutoff current i ceo v ce =20v,i b =0 1 a forward current transfer ratio h fe v ce =10v,i c = 2 ma 400 2000 collector-emitter saturation voltage v ce(sat) i c =10ma,i b = 1 ma 0.05 0.20 v transition frequency f t v cb =10v,i e = ?2 ma, f = 200 mhz 120 mhz sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type ic smd type transistors smd type smd type product specification 4008-318-123
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